WIRING FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

摘要

A method of forming wiring for a semiconductor device according to the present invention, comprises: selectively etching a first surface of a silicon substrate to form a predetermined pattern; coating, with a metallic layer, a selected area of the first surface containing a portion where the predetermined pattern is formed; forming an organic material on the first surface to fill an etched portion and cover the coated metallic layer; forming a via hole in the organic material and connecting metallic wiring through the via hole to the coated metallic layer; and grinding a second surface corresponding to the first surface to remove a part of the metallic layer formed in the etched portion.