SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To ensure sufficient reliability in insulation of a gate insulation film near an opening of a trench while preventing insulation breakdown of a gate oxide film on a bottom of the trench.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: forming on a silicon carbide substrate 100, a trench TR having an opening OP and corners CR; forming a corner insulation film 201R which covers the corners CR; and forming a gate insulation film 201 which covers a region from the opening OP to the corners CR. The process of forming the gate insulation film 201 includes a process of thermally oxidizing the trench TR on which the corner insulation film 201R is provided. The process of thermally oxidizing the trench TR includes a process of heating the silicon carbide substrate 100 to 1300°C and over.