| 发明名称 |
R-T-B BASED PERMANENT MAGNET |
| 摘要 |
The present invention provides such a permanent magnet that its magnetic properties will not significantly decrease and it can be prepared at a lower temperature, compared to conventional R-T-B based permanent magnets. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Ce-T-B based crystal layer can be formed by alternatively stacking the R1-T-B based crystal layer and the Ce-T-B based crystal layer. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the crystallization temperature can be lowered by the Ce-T-B based crystal layer. |
| 申请公布号 |
US2014320245(A1) |
申请公布日期 |
2014.10.30 |
| 申请号 |
US201414261516 |
申请日期 |
2014.04.25 |
| 申请人 |
TDK Corporation |
发明人 |
HASHIMOTO Ryuji;SUZUKI Kenichi;CHOI Kyung-ku |
| 分类号 |
H01F1/057 |
主分类号 |
H01F1/057 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A R-T-B based permanent magnet, comprising
a R-T-B based structure in which a R1-T-B based crystal layer and a Ce-T-B based crystal layer are stacked, wherein R1 represents at least one rare earth element except Ce, and T represents at least one transition metal element comprising Fe or a combination of Fe and Co. |
| 地址 |
Tokyo JP |
