发明名称 FLEXIBLE AND ON WAFER HYBRID PLASMA-SEMICONDUCTOR TRANSISTORS
摘要 Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). A preferred device is a hybrid plasma semiconductor device having base, emitting and microcavity collector regions formed on a single side of a device layer. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.
申请公布号 US2014319654(A1) 申请公布日期 2014.10.30
申请号 US201414330254 申请日期 2014.07.14
申请人 The Board of Trustees of the University of Illinois 发明人 Eden J. Gary;Tchertchian Paul A.;Wagner Clark J.;Sievers Dane J.;Houlahan Thomas J.;Li Benben
分类号 H01L33/02 主分类号 H01L33/02
代理机构 代理人
主权项 1. A hybrid plasma semiconductor device, comprising base, emitting and microcavity collector regions formed on a single side of a device layer.
地址 Urbana IL US