发明名称 |
AVALANCHE PHOTODIODE |
摘要 |
According to one aspect, there is provided an avalanche photodiode comprising a first semiconductor layer that absorbs photons of a first wavelength range and having a first energy bandgap; a second semiconductor layer that absorbs photons of a second wavelength range and having a second energy bandgap, the second energy bandgap being different from the first energy bandgap; and a control layer between the first semiconductor layer and the second semiconductor layer, the control layer having a third energy bandgap engineered to suppress carriers created from dark current. |
申请公布号 |
US2014319638(A1) |
申请公布日期 |
2014.10.30 |
申请号 |
US201214351608 |
申请日期 |
2012.10.19 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
发明人 |
Chia Ching Kean |
分类号 |
H01L31/107 |
主分类号 |
H01L31/107 |
代理机构 |
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代理人 |
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主权项 |
1. An avalanche photodiode comprising
a first semiconductor layer that absorbs photons of a first wavelength range and having a first energy bandgap; a second semiconductor layer that absorbs photons of a second wavelength range and having a second energy bandgap, the second energy bandgap being different from the first energy bandgap; and a control layer between the first semiconductor layer and the second semiconductor layer, the control layer having a third energy bandgap engineered to suppress carriers created from dark current and to allow for a photocurrent with a substantially vertical profile near the breakdown voltage of the avalanche photodiode. |
地址 |
Singapore SG |