Through-Substrate Vias and Methods for Forming the Same

摘要

A device includes a semiconductor substrate and a Metal-Oxide-Semiconductor (MOS) transistor. The MOS transistor includes a gate electrode over the semiconductor substrate, and a source/drain region on a side of the gate electrode. A source/drain contact plug includes a lower portion and an upper portion over the lower portion, wherein the source/drain contact plug is disposed over and electrically connected to the source/drain region. A gate contact plug is disposed over and electrically connected to the gate electrode, wherein a top surface of the gate contact plug is level with a top surface of the top portion of the source/drain contact plug. A Through-Substrate Via (TSV) extends into the semiconductor substrate. A top surface of the TSV is substantially level with an interface between the gate contact plug and the gate electrode.

主权项

1. A device comprising:
a semiconductor substrate; a Metal-Oxide-Semiconductor (MOS) transistor comprising:
a gate electrode over the semiconductor substrate; anda source/drain region on a side of the gate electrode; a source/drain contact plug comprising a lower portion and an upper portion over the lower portion, wherein the source/drain contact plug is over and electrically connected to the source/drain region; a gate contact plug over and electrically connected to the gate electrode, wherein a top surface of the gate contact plug is level with a top surface of the upper portion of the source/drain contact plug; a first via and a first metal line over the first via, wherein the first via and the first metal line form a first dual damascene structure, and a bottom surface of the first via is in contact with a top surface of the gate contact plug; and a Through-Substrate Via (TSV) extending into the semiconductor substrate, wherein a top surface of the TSV is substantially level with a top surface of the first metal line.