PHOTODETECTOR ARRAY HAVING DIFFERENT PHOTODIODE STRUCTURES

摘要

A method (100) of fabricating a photodiode array having different photodiode structures includes providing (101) a semiconductor substrate having first and second diode areas including a bottom substrate portion doped with a first doping type, an intrinsic layer, and a top silicon layer doped with a second doping type. The second diode areas are implanted (103) with the second doping type. A dopant concentration in the surface of the second diode areas is at least three times higher than in the first diode areas. The top silicon layer is thermally oxidized (104) to form a thermal silicon oxide layer to provide a bottom Anti-Reflective Coating (ARC) layer. The second diode areas grow thermal silicon oxide thicker as compared to the first diode areas. A top ARC layer is deposited (105) on the bottom ARC layer. First PDs are provided in the first diode areas and second PDs provided in the second diode areas.