发明名称 COPPER CLEANING AND PROTECTION FORMULATIONS
摘要 A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include corrosion inhibitor(s) and surfactant(s). The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
申请公布号 WO2014176193(A1) 申请公布日期 2014.10.30
申请号 WO2014US34872 申请日期 2014.04.22
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 LIU, JUN;SUN, LAISHENG;MEDD, STEVEN;BARNES, JEFFREY, A.;WRSCHKA, PETER;THOMAS, ELIZABETH
分类号 C23G1/00;C23G1/18 主分类号 C23G1/00
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