A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include corrosion inhibitor(s) and surfactant(s). The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
申请公布号
WO2014176193(A1)
申请公布日期
2014.10.30
申请号
WO2014US34872
申请日期
2014.04.22
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.
发明人
LIU, JUN;SUN, LAISHENG;MEDD, STEVEN;BARNES, JEFFREY, A.;WRSCHKA, PETER;THOMAS, ELIZABETH