发明名称 SYSTEMS, METHODS, AND APPARATUS FOR PRODUCTION COATINGS OF LOW-EMISSIVITY GLASS
摘要 Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.
申请公布号 US2014322507(A1) 申请公布日期 2014.10.30
申请号 US201314144915 申请日期 2013.12.31
申请人 Intermolecular Inc. 发明人 Ding Guowen;Cheng Jeremy;Imran Muhammad;Le Minh Huu;Schweigert Daniel;Xu Yongli;Zhang Guizhen
分类号 C23C14/08;C23C14/14 主分类号 C23C14/08
代理机构 代理人
主权项 1. A method of forming a low emissivity panel, the method comprising: providing a partially fabricated panel, the partially fabricated panel comprising a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer; forming a first interface layer over the barrier layer; forming a top dielectric layer over the first interface layer; and forming a second interface layer over the top dielectric layer, the barrier layer comprising a partially oxidized alloy of three or more metals,the top dielectric layer being formed using reactive sputtering in an oxygen containing environment, andthe first interface layer substantially preventing further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer.
地址 San Jose CA US