发明名称 VERTICAL SWITCH THREE-DIMENSIONAL MEMORY ARRAY
摘要 A memory device includes a substrate, and, disposed thereover, an array of vertical memory switches. In some embodiments, each switch has at least three terminals and a cross-sectional area less than 6 F2.
申请公布号 US2014321190(A1) 申请公布日期 2014.10.30
申请号 US201414282444 申请日期 2014.05.20
申请人 Shepard Daniel R. 发明人 Shepard Daniel R.
分类号 G11C8/10;G11C13/00 主分类号 G11C8/10
代理机构 代理人
主权项
地址 North Hampton NH US