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发明名称
VERTICAL SWITCH THREE-DIMENSIONAL MEMORY ARRAY
摘要
A memory device includes a substrate, and, disposed thereover, an array of vertical memory switches. In some embodiments, each switch has at least three terminals and a cross-sectional area less than 6 F2.
申请公布号
US2014321190(A1)
申请公布日期
2014.10.30
申请号
US201414282444
申请日期
2014.05.20
申请人
Shepard Daniel R.
发明人
Shepard Daniel R.
分类号
G11C8/10;G11C13/00
主分类号
G11C8/10
代理机构
代理人
主权项
地址
North Hampton NH US
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