发明名称 RESIST UNDERLAYER COMPOSITION, METHOD OF FORMING PATTERNS AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERNS
摘要 A resist underlayer composition, a method of forming patterns, and semiconductor integrated circuit device, the composition including a solvent; and a compound including a moiety represented by the following Chemical Formula 1:;
申请公布号 US2014319659(A1) 申请公布日期 2014.10.30
申请号 US201314088509 申请日期 2013.11.25
申请人 KWON Hyo-Young;KIM Min-Gyum;LEE Jun-Ho;CHEON Hwan-Sung 发明人 KWON Hyo-Young;KIM Min-Gyum;LEE Jun-Ho;CHEON Hwan-Sung
分类号 G03F7/09;G03F7/20 主分类号 G03F7/09
代理机构 代理人
主权项 1. A resist underlayer composition, comprising: a solvent; and a compound including a moiety represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, A1 and A2 are each independently one selected from the following Group 1, B1 is one selected from the following Group 2, and R1 and R2 are each independently one selected from hydrogen, a hydroxy group, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C6 to C10 aryl group, an allyl group, a halogen, or a C1 to C10 alkoxy group substituted with a metal element, P, S, or Se, wherein, in Group 1, M1 and M2 are each independently a metal element, a metal complex, C, N, P, S, Se, H, or a combination thereof, provided that in at least one of A1 and A2, M1 or M2 of the Group 1 includes a metal element, a metal complex, P, S, Se, or a combination thereof,
地址 Uiwang-si KR