发明名称 Integrated Switchable Capacitive Device
摘要 An integrated circuit includes a substrate. A fixed main capacitor electrode is disposed in a metal layer overlying the substrate. A second main capacitor electrode is disposed in a metal layer and spaced from the fixed main capacitor electrode. A movable capacitor electrode is disposed adjacent the fixed main capacitor electrode. The movable capacitor electrode is switchable between a first configuration in which the movable capacitor electrode and fixed main capacitor electrode are mutually spaced out in such a manner as to form an auxiliary capacitor electrically connected to the main capacitor. In a second configuration, the movable capacitor electrode and the fixed main capacitor electrode are in electrical contact in such a manner as to give a second capacitive value.
申请公布号 US2014319653(A1) 申请公布日期 2014.10.30
申请号 US201414264227 申请日期 2014.04.29
申请人 STMicroelectronics (Rousset) SAS 发明人 Fornara Pascal;Rivero Christian
分类号 H01L23/522;H01G5/16;H01L21/768 主分类号 H01L23/522
代理机构 代理人
主权项 1. An integrated circuit comprising: a substrate; an interconnection region overlying the substrate, the interconnect region comprising a plurality of metallization levels separated by an insulating region; and a switchable capacitive device having an adjustable capacitive value disposed within the interconnection region, the switchable capacitive device comprising a switchable capacitive cell having a main capacitor and a metal system disposed, at least in part, in a cavity within the interconnect region, the metal system electrically connected to the main capacitor, the metal system having first and second metal elements that are mobile relative to one another within the cavity and being switchable between a first configuration in which the first and second elements are mutually spaced out in such a manner as to form an auxiliary capacitor electrically connected to the main capacitor and to give a first capacitive value to the capacitive cell, and a second configuration in which the first and second metal elements are in mutual contact in such a manner as to give a second capacitive value to the capacitive cell.
地址 Rousset FR