| 发明名称 |
SEMICONDUCTOR DETECTOR |
| 摘要 |
The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution. |
| 申请公布号 |
US2014319635(A1) |
申请公布日期 |
2014.10.30 |
| 申请号 |
US201414152332 |
申请日期 |
2014.01.10 |
| 申请人 |
TSINGHUA UNIVERSITY ;NUCTECH COMPANY LIMITED |
发明人 |
Li Yuanjing;Zhang Lan;Li Yulan;Liu Yinong;Fu Jianqiang;Jiang Hao;Deng Zhi;Xue Tao;Zhang Wei;Li Jun |
| 分类号 |
G01T1/36;G01T3/08 |
主分类号 |
G01T1/36 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor detector comprising a semiconductor crystal, a cathode, an anode and at least one ladder electrode;
the semiconductor crystal comprising a top surface, a bottom surface and at least one side; wherein the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; wherein the cathode is disposed on the bottom surface of the semiconductor crystal, wherein the anode is disposed on the top surface of the semiconductor crystal, and wherein the ladder electrode is disposed on the at least one side of the semiconductor crystal; and wherein the ladder electrode comprises a plurality of sub-electrodes. |
| 地址 |
Beijing CN |
