PERPENDICULAR STT-MRAM HAVING PERMEABLE DIELECTRIC LAYERS

摘要

A perpendicular STT-MRAM comprises apparatus and a method of manufacturing a plurality of magnetoresistive memory element having permeable dielectric layer. As an external perpendicular magnetic field exists, the permeable dielectric layers have capability to absorb and channel most magnetic flux surrounding the MTJ element instead of penetrate through the MTJ element. Thus, magnetization of a recording layer can be less affected by the stray field during either writing or reading, standby operation

主权项

1. A perpendicular spin-transfer torque magnetoresistive memory comprising a control circuitry and at least one memory cell comprising:
a bottom electrode provided on a surface of a substrate and connecting to a VIA of a select transistor; an etching stop layer provided on the top surface of the bottom electrode; an MTJ stack consisting of a seed layer provided on the top surface of the etching stop layer, a perpendicular MTJ multilayer provided on the top surface of the seed layer and a cap layer provided on the top surface of the perpendicular MTJ stack layer as an upper electric electrode; a dielectric ALD layer provided on the top surface of the etching stop layer and on the side wall of MTJ stack; a magnetic permeable dielectric layer provided on the top surface and surrounding the side wall of the dielectric ALD layer; a bit line provided on the top surface of the cap layer and the magnetic permeable dielectric layer.