FINFET WITH ACTIVE REGION SHAPED STRUCTURES AND CHANNEL SEPARATION

摘要

A semiconductor structure in fabrication includes a n-FinFET and p-FinFET. Stress inducing materials such as silicon and silicon germanium are epitaxially grown into naturally diamond-shaped structures atop the silicon fins of the n-FinFET and p-FinFET areas. The diamond structures act as the source, drain and channel between the source and drain. The diamond structures of the channel are selectively separated from the fin while retaining the fin connections of the diamond-shaped growth of the source and the drain. Further fabrication to complete the structure may then proceed.

主权项

1. A method, comprising:
providing an intermediate semiconductor structure, comprising:
a semiconductor substrate;at least one fin coupled to the semiconductor substrate; selectively growing a plurality of naturally shaped structures on a top surface of the at least one fin, the plurality of naturally shaped structures comprising a source, a drain and a channel between the source and the drain; and creating a separation between the plurality of naturally shaped structures of the channel and the corresponding fin therebelow.