TSV Structure With A Built-In U-Shaped FET Transistor For Improved Characterization

摘要

A through-the silicon via (TSV) structure providing a built-in TSV U-shaped FET that includes an annular gate shaped as a TSV partially embedded in a substrate, the annular gate having an inner and an outer surface bound by an oxide layer; a drain formed on an isolated epitaxial layer on top of the substrate conformally connecting the gate oxide layer surrounding the inner annular surface of the TSV; a source partially contacting said gate oxide layer conformally contacting gate oxide layer surrounding the outer surface of the TSV.

主权项

1. A semiconductor structure comprising:
a) a built-in U-shaped FET transistor having a TSV providing an annular gate, said TSV partially buried in a substrate, said annular gate being bound by an oxide layer, said annular gate having an inner and outer surface; b) a drain formed on an isolated epitaxial layer on a top surface of said substrate conformally connected to said gate oxide layer surrounding said inner surface of said TSV; and c) a source partially contacting said gate oxide layer conformally connected to said gate oxide layer surrounding said outer surface of said TSV.