| 摘要 |
A CMP polishing solution for polishing ruthenium metals. Said CMP polishing solution contains abrasive particles, an acid component, an oxidant, a triazole compound, a quaternary phosphonium salt, and water. The acid component contains at least one species selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids that contain multiple carboxyl groups but no hydroxyl groups, and salts thereof. The abovementioned abrasive particles exhibit negative zeta potential in this CMP polishing solution, and the pH of this CMP polishing solution is no less than 3.0 but less than 7.0. |
