发明名称 SELECTIVE SONICATION-ASSISTED DEPOSITION METHOD OF INORGANIC PARTICLES AND CHA ZEOLITE MEMBRANES GROWN FROM SEEDED UNIFORM LAYERS ON SUBSTRATES USING THE METHOD AND PLATE-LIKE SI-CHA ZEOLITE PARTICLES AND MANUFACTURING METHOD OF THE SAME
摘要 The present invention relates to a selective sonication-assisted deposition method of inorganic particles using ultrasonic waves, CHA zeolite membranes grown from seeded uniform layers on substrates prepared thereby, plate-like Si-CHA zeolite particles used in the same, and a method for preparing the same and, more specifically, to a selective sonication-assisted deposition method of inorganic particles using ultrasonic waves, CHA zeolite membranes grown from seeded uniform layers on substrates prepared thereby, plate-like Si-CHA zeolite particles used in the same, and a method for preparing the same, which can selectively deposit thin particles on substrates or supports, and can obtain a high surface coverage only with physical bonding, thereby forming uniform layers playing a major role in preparing inorganic material membranes such as zeolite reproducibly through the secondary growth.
申请公布号 KR20140126275(A) 申请公布日期 2014.10.30
申请号 KR20140111055 申请日期 2014.08.25
申请人 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 CHOI, JUNG KYU;KIM, EUN JOO;CAI WANXI
分类号 C01B39/02;B01J20/18;B01J29/06 主分类号 C01B39/02
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