发明名称 ADJUSTABLE MOS RESISTOR
摘要 A variety of circuits, methods and devices are implemented for providing an adjustable resistance. According to one such implementation an adjustable resistive device includes a metal-oxide semiconductor (MOS) transistor having a gate, a drain, a source, and a body. First circuitry controls a resistance from drain to source by applying a gate voltage that is a function of a variable control input. Second circuitry adjusts a voltage at the body according to a drain voltage and a source voltage, whereby the resistance from drain to source is substantially linear for a given value of the variable control input and over a voltage range.
申请公布号 US2014320204(A1) 申请公布日期 2014.10.30
申请号 US200914119834 申请日期 2009.12.28
申请人 NXP B.V. 发明人 Kohsiek Cord-Heinrich
分类号 H03H11/24 主分类号 H03H11/24
代理机构 代理人
主权项 1. An adjustable resistive device comprising: a metal-oxide semiconductor (MOS) transistor having a gate, a drain, a source, and a body; and first circuitry configured to control a resistance from drain to source by applying a gate voltage that is a function of a variable control input; and second circuitry configured to adjust a voltage at the body according to a ratio of voltage from drain to source, whereby the resistance from drain to source is substantially linear for a given value of the variable control input and over a voltage range.
地址 Eindhoven NL