发明名称 PHOTODETECTOR
摘要 A photodetector 1A comprises an optical element 10A for generating an electric field component in a predetermined direction when light is incident thereon along the predetermined direction, the optical element 10A having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to the predetermined direction; and a semiconductor layer 40, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element 10A, having a semiconductor multilayer body 42 for generating a current according to the electric field component; each end part on the other side of the second regions being located closer to the other side than is each end part on the other side of the first regions; each first region being made of a dielectric body having a refractive index greater than that of each second region.
申请公布号 US2014319637(A1) 申请公布日期 2014.10.30
申请号 US201414259509 申请日期 2014.04.23
申请人 HAMAMATSU PHOTONICS K.K. 发明人 NAKAJIMA Kazutoshi;NIIGAKI Minoru;HIROHATA Toru;YAMASHITA Hiroyuki;AKAHORI Wataru
分类号 H01L31/0232 主分类号 H01L31/0232
代理机构 代理人
主权项 1. A photodetector comprising: an optical element for generating an electric field component in a predetermined direction when light is incident thereon along the predetermined direction, the optical element having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to the predetermined direction; and a semiconductor layer, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element, having a semiconductor multilayer body for generating a current according to the electric field component in the predetermined direction caused by the optical element; wherein each end part on the other side of the second regions is located closer to the other side than is each end part on the other side of the first regions; and wherein each first region is made of a dielectric body having a refractive index greater than that of each second region.
地址 Hamamatsu-shi JP