| 摘要 |
<p>In order to obtain a semiconductor device, such as an IGBT, having a relatively low on-resistance while minimizing reduction of the saturation current, a semiconductor substrate includes active mesa portions (90), which are mesa portions that face sides of trench gates (2), with a gate insulating film (3) therebetween, and that have injected therein carriers of the same conductivity type as the semiconductor substrate. Each active mesa portion (90) comprises a plurality of types of parts which extend in different directions but with a uniform width, as seen in a plan view of the substrate surface. The plurality of types of parts are connected to one another alternately and periodically so that the active mesa portion (90) extends in a zigzag configuration. The semiconductor substrate has places where adjacent active mesa portions (90) are spaced from each other by a distance greater than the width of the active mesa portions (90).</p> |
