| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device with a three-dimensional structure which can prevent the occurrence of a void in an encapsulation material and deformation of a substrate.SOLUTION: A semiconductor device manufacturing method comprises: a connection pad formation process of forming connection pads; a connection process of connecting the connection pads with input/output terminals provided on one principal surface of a semiconductor chip; an underfill material filling process of filling an underfill material in a gap between the substrate and the semiconductor chip; a mold material formation process of forming a mold material which covers lateral faces of the semiconductor chip and one principal surface of the substrate which is not covered with the underfill material and the other principal surface of the substrate; a first thinning process of performing thinning from the other principal surface side of the substrate; and a through electrode formation process of forming through electrodes in the substrate from the other principal surface side of the substrate. |
