| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor package which has reduced warpage and strain, a stable junction layer formed between parts without complicating manufacturing steps, and good airtightness.SOLUTION: When parts forming a semiconductor package are bonded to each other, they are bonded in a temperature range which suppresses generations of warpage and strain of parts by using a bonding layer containing 98 wt.% or more of one metal element with melting point 400°C or higher, such as Ag. After bonding, it is possible to obtain high melting point, and each part is configured so that all surfaces of each of bonding layers to be bonding surfaces are parallel, thereby all thickness directions of bonding layers are aligned with one another in the same direction and a pressurizing direction during formation of bonding layers are one of lamination directions of each part. |
