VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME

摘要

A method for manufacturing a vertically structured Group III nitride semiconductor LED chip includes a first step of forming a light emitting structure laminate; a second step of forming a plurality of separate light emitting structures by partially removing the light emitting structure laminate to partially expose the growth substrate; a third step of forming a conductive support, which conductive support integrally supporting the light emitting structures; a fourth step of separating the growth substrate by removing the lift-off layer; and a fifth step of dividing the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure. A first through-hole is formed to open in a central region of each of the light emitting structures such that at least the lift-off layer is exposed, and an etchant is supplied from the first through-hole in the fourth step.

主权项

1. A method for manufacturing a vertically structured Group III nitride semiconductor LED chip, comprising:
a first step of forming a light emitting structure laminate by sequentially stacking a first conductivity type Group III nitride semiconductor layer, a light emitting layer, and a second conductivity type Group III nitride semiconductor layer on a growth substrate with a lift-off layer provided therebetween, the second conductivity type being different from the first conductivity; a second step of forming a plurality of separate light emitting structures by partially removing the light emitting structure laminate to partially expose the growth substrate; a third step of forming a conductive support having a lower electrode, which conductive support integrally supporting the plurality of the light emitting structures; a fourth step of separating the growth substrate from the plurality of the light emitting structures by removing the lift-off layer using a chemical lift-off process; and a fifth step of dividing the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure supported by the conductive support, wherein a first through-hole is formed to open in a central region of each of the light emitting structures such that at least the lift-off layer is exposed, before the fourth step, and an etchant is supplied from the first through-hole in the fourth step.