SEMICONDUCTOR COMPONENT COMPRISING AN INTERLAYER

摘要

The invention relates to a method and an optoelectronic semiconductor component comprising a layer sequence comprising a p-doped layer, comprising an n-doped layer and comprising an active zone for generating electromagnetic radiation, said active zone being arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer comprises at least GaN, wherein an interlayer is arranged in the n-doped layer, wherein the interlayer comprises AlxGa1-xN, wherein 0