OXIDE SEMICONDUCTOR FILM AND PROCESS OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve crystallinity of an oxide semiconductor and to provide a crystalline oxide semiconductor film having a region crystallized at an under-layer interface or nearby and to provide a process of manufacturing the same.SOLUTION: An oxide semiconductor film containing indium, gallium, and zinc is formed. The oxide semiconductor film is heated by irradiating an energy beam. The oxide semiconductor film contains micro-crystals or a crystalline region oriented in c-axis.