| 发明名称 |
METHOD OF FORMING SHALLOW TRENCH ISOLATIONS |
| 摘要 |
A method of forming shallow trench isolation structures including the steps of forming a trench in a substrate, filling a first insulating layer in the lower portion of the trench and defining a recess at the upper portion of the trench, forming a buffer layer on the sidewall of the recess, filling a second insulating layer in the recess, and performing a steam annealing process to transform the substrate surrounding the first insulating layer into an oxide layer. |
| 申请公布号 |
US2014322891(A1) |
申请公布日期 |
2014.10.30 |
| 申请号 |
US201414329982 |
申请日期 |
2014.07.13 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Liou En-Chiuan;Tsao Po-Chao;Liang Chia-Jui;Wu Jia-Rong |
| 分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming shallow trench isolation structures, comprising the steps of:
forming a trench in a substrate; filling a first insulating layer in the lower portion of said trench and defining a recess at the upper portion of said trench; forming a buffer layer on the sidewall of said recess; filling a second insulating layer in said recess; and performing a steam annealing process to transform said substrate surrounding said first insulating layer into an oxide layer. |
| 地址 |
Hsin-Chu City TW |
