发明名称 FORMING SPHERICAL SEMICONDUCTIVE NANOPARTICLES
摘要 In certain embodiments, a material comprising one or more semiconductive substances is vaporized to generate a vapor phase condensate. The vapor phase condensate is allowed to form nanoparticles. The nanoparticles are annealed to yield substantially spherical nanoparticles.
申请公布号 US2014322373(A1) 申请公布日期 2014.10.30
申请号 US201414330242 申请日期 2014.07.14
申请人 Raytheon Company 发明人 Spariosu Kalin
分类号 C01B19/00;C22F1/00 主分类号 C01B19/00
代理机构 代理人
主权项 1. A system comprising: a vacuum chamber; a material hopper coupled to the vacuum chamber; a heating element disposed within the vacuum chamber; and a quenchant gas supplier disposed within the vacuum chamber; the vacuum chamber configured to provide an near vacuum volume; the material hopper configured to direct material to the heating element, the material comprising one or more semiconductive substances; the heating element configured to raise the temperature of the material to vaporize the material to generate a vapor phase condensate; the quenchant gas supplier configured to introduce a quenchant gas into the vacuum chamber to cool the vapor phase condensate to form a plurality of nanoparticles; and the heating element configured to raise the temperature of the nanoparticles to anneal the nanoparticles to yield substantially spherical nanoparticles.
地址 Waltham MA US