SEMICONDUCTOR LASER HAVING IMPROVED INDEX GUIDING

摘要

The invention relates to a semiconductor laser (1), comprising a main body (2). A strip (3) having a narrower width is provided on the main body (2). An active zone (4) for generating light radiation is provided. Surfaces (9, 10) of the main body (2) to the sides of the strip (3) and side surfaces (13, 14) of the strip (3) are covered with an electrically insulating protective layer (11). An electrically conductive layer (12) is provided on an upper side of the strip (3) as a contact. The semiconductor laser is characterised in that a cavity (15) is provided between a side surface (13, 14) of the strip (3) and the protective layer (11) at least in a limited section.