| 摘要 |
<p>The present invention implements an efficient page mode in a semiconductor device provided with resistance-change memory cells. Said semiconductor device is provided with the following: a word line; a plurality of bit lines; a plurality of resistance-change memory cells laid out so as to correspond to the points where the bit lines intersect the word line, one end of each of said resistance-change memory cells being connected to the corresponding bit line; a plurality of data control circuits connected to the plurality of bit lines, respectively; and a command control circuit. The command control circuit activates the word line in response to a first command being inputted, holds data in each of one or more selected data control circuits in response to a second command being inputted, and simultaneously writes the data held in the one or more selected data control circuits to the corresponding resistance-change memory cells in response to a third command being inputted.</p> |
