发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same which can achieve downsizing.SOLUTION: A semiconductor device manufacturing method comprises: forming an element isolation region 14 on a semiconductor substrate 10; forming a first conductivity type first well 16a and second well 16b by introducing a first conductivity type first impurity; forming a second conductivity type third well 20a by introducing a second conductivity type second impurity and forming a second conductivity type isolation well 32 by introducing the second impurity into a region between the first well and the second well; and further introducing a second conductivity type third impurity into the region between the first well and the second well.
申请公布号 JP2014207361(A) 申请公布日期 2014.10.30
申请号 JP20130084813 申请日期 2013.04.15
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 TORII YASUNOBU
分类号 H01L27/08;H01L21/8238;H01L27/092 主分类号 H01L27/08
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