发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same which can achieve downsizing.SOLUTION: A semiconductor device manufacturing method comprises: forming an element isolation region 14 on a semiconductor substrate 10; forming a first conductivity type first well 16a and second well 16b by introducing a first conductivity type first impurity; forming a second conductivity type third well 20a by introducing a second conductivity type second impurity and forming a second conductivity type isolation well 32 by introducing the second impurity into a region between the first well and the second well; and further introducing a second conductivity type third impurity into the region between the first well and the second well. |
申请公布号 |
JP2014207361(A) |
申请公布日期 |
2014.10.30 |
申请号 |
JP20130084813 |
申请日期 |
2013.04.15 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
TORII YASUNOBU |
分类号 |
H01L27/08;H01L21/8238;H01L27/092 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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