SELF-CLEANING RADIO FREQUENCY PLASMA SOURCE

摘要

A self-cleaning radio frequency (RF) plasma source for a semiconductor manufacturing process is described. Various examples provide an RF plasma source comprising an RF antenna and a rotatable dielectric sleeve disposed around the RF antenna. The dielectric is positioned between a process chamber and cleaning chamber such that portions of the surface of the dielectric may be exposed to either the process chamber or the cleaning chamber. As material is deposited on the outer surface of the dielectric in the process chamber, the dielectric sleeve is rotated so that the portion containing the buildup is exposed to the cleaning chamber. A sputtering process in the cleaning chamber removes the buildup from the surface of the sleeve. The dielectric sleeve is then rotated so that it exposed to the process chamber. Other embodiments are disclosed and claimed.

主权项

1. A plasma source, comprising:
a plasma chamber, a cleaning chamber positioned adjacent to the plasma chamber; an RF antenna; and a dielectric sleeve disposed around the RF antenna, the dielectric sleeve disposed in a gap in a shared wall between the plasma chamber and the cleaning chamber; wherein the dielectric sleeve is rotatable such that in a first position an outer surface of the dielectric sleeve is exposed to the plasma chamber and a second portion of the outer surface of the dielectric sleeve is exposed within the cleaning chamber, and in a second position the outer surface of the dielectric sleeve is exposed to the cleaning chamber and the second portion of the outer surface of the dielectric sleeve is exposed to the plasma chamber.