| 发明名称 |
SOLID-STATE ELECTRONIC DEVICE |
| 摘要 |
A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C. |
| 申请公布号 |
US2014319660(A1) |
申请公布日期 |
2014.10.30 |
| 申请号 |
US201214357167 |
申请日期 |
2012.10.25 |
| 申请人 |
Japan Science and Technology Agency |
发明人 |
Shimoda Tatsuya;Tokumitsu Eisuke;Onoue Masatoshi;Miyasako Takaaki |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solid-state electronic device comprising:
an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C. |
| 地址 |
Saitama JP |
