SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a substrate, a gate positioned on the substrate, a drain and a source formed in the substrate at respective two sides of the gate, and a doped region formed in the source. The drain and the source comprise a first conductivity type and the doped region comprises a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other.

主权项

1. An electrostatic discharge (ESD) protection semiconductor device comprising:
a substrate; a gate positioned on the substrate; a drain and a source formed in the substrate at respective two sides of the gate, the drain and the source comprising a first conductivity type; and a first doped region formed at one end of the source, the doped region comprising a second conductivity type complementary to the first conductivity type.