| 发明名称 |
SEMICONDUCTOR-ON-INSULATOR STRUCTURE AND PROCESS FOR PRODUCING SAME |
| 摘要 |
A semiconductor-on-insulator structure, including a semiconductor thin film having electronic devices formed therein, the semiconductor thin film being disposed on a first face of an electrically insulating thin film; wherein to reduce parasitic capacitance, there is no bulk substrate attached to a second face of the electrically insulating thin film opposite to the first face, and to provide a path for heat flow from the devices, the thermal conductivity of the electrically insulating thin film is substantially greater than 1.4 W·m−1·K−1. |
| 申请公布号 |
US2014319612(A1) |
申请公布日期 |
2014.10.30 |
| 申请号 |
US201214356880 |
申请日期 |
2012.11.02 |
| 申请人 |
The Silanna Group Pty Ltd |
发明人 |
Brawley Andrew John |
| 分类号 |
H01L29/786;H01L27/12;H01L21/84;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor-on-insulator structure, including a semiconductor thin film having electronic devices formed therein, the semiconductor thin film being disposed on a first face of an electrically insulating thin film; wherein to reduce parasitic capacitance, there is no bulk substrate attached to a second face of the electrically insulating thin film opposite to the first face, and to provide a path for heat flow from the devices, the thermal conductivity of the electrically insulating thin film is substantially greater than 1.4 W·m−1·K−1. |
| 地址 |
Eight Mile Plains, Queensland AU |
