发明名称 |
NITRIDE SEMICONDUCTOR SUBSTRATE |
摘要 |
A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrate 1 is prepared in such a manner that a buffer layer 3 and a semiconductor active layer 4 each comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, the one principal plane has an offset angle of 0.1° to 1° or −1° to −0.1° with respect to a (111) plane, an average dopant concentration in a bulk is 1×1018 to 1×1021 cm−3, the Si single crystal substrate 2 has a SiO2 film on the back, and the total thickness of the buffer layer 3 and the semiconductor active layer 4 is 4 to 10 μm. |
申请公布号 |
US2014319535(A1) |
申请公布日期 |
2014.10.30 |
申请号 |
US201414258181 |
申请日期 |
2014.04.22 |
申请人 |
COVALENT MATERIALS CORPORATION |
发明人 |
KOMIYAMA Jun;ERIGUCHI Kenichi;YOSHIDA Akira;OISHI Hiroshi;ABE Yoshihisa;SUZUKI Shunichi |
分类号 |
H01L29/20;H01L29/04 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
1. A nitride semiconductor substrate in which a buffer layer and a semiconductor active layer each comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, wherein
the one principal plane has an offset angle of 0.1° to 1° or −1° to −0.1° with respect to a (111) plane, an average dopant concentration in a bulk is 1×1018 to 1×1021 cm−3, said Si single crystal substrate has a SiO2 film on the back, and the total thickness of said buffer layer and said semiconductor active layer is 4 to 10 μm. |
地址 |
Shinagawa-ku JP |