| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a substrate having a hexagonal crystalline structure and a (0001) surface, and conductive films on the surface of the substrate. The conductive films include a first conductive film and a second conductive film located above the first conductive film with respect to the surface, wherein the first conductive film has a crystalline structure which does not have a plane that has a symmetry equivalent to the symmetry of atomic arrangement in the surface of the substrate, the second conductive film has a crystalline structure having at least one plane that has a symmetry equivalent to the symmetry of atomic arrangement in the surface of the substrate, and the second conductive film is polycrystalline and has a grain size no larger than 15 μm. |
| 申请公布号 |
US2014319513(A1) |
申请公布日期 |
2014.10.30 |
| 申请号 |
US201414162865 |
申请日期 |
2014.01.24 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
Maeda Kazuhiro;Shiga Toshihiko |
| 分类号 |
H01L29/04;H01L21/283;H01L29/16;H01L29/20;H01L29/22 |
主分类号 |
H01L29/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate having a hexagonal crystalline structure and a (0001) surface; and a plurality of conductive films on said surface of said substrate, wherein
said plurality conductive films includes a first conductive film and a second conductive film located above said first conductive film relative to said surface,said first conductive film has a crystalline structure which does not have a plane that has a symmetry equivalent to a symmetry of atomic arrangement in said surface of said substrate,said second conductive film has a crystalline structure having at least one plane that has a symmetry equivalent to the symmetry of atomic arrangement in said surface of said substrate, andsaid second conductive film is polycrystalline and has a grain size no larger than 15 μm. |
| 地址 |
Tokyo JP |
