NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention discloses a nitride semiconductor light emitting device with improved light efficiency. The nitride semiconductor light emitting device includes a n-type nitride layer and p-type nitride layer, an active layer disposed between the n-type and p-type nitride layers and with a multiple quantum well structure wherein a plurality of quantum well layers and a plurality of quantum barrier layers are stacked alternatively in the active layer, and a superlattice layer between the active layer and the p-type nitride layer with asymmetric structure. Herein, a thickness of a well layers gradually increases from the p-type nitride layer to the active layer and the height of the barrier layers gradually increases from the active layer to the p-type nitride layer and therefore, an injection efficiency of a hole supplied from p-type nitride layer to an active layer is increased.

主权项

1. A nitride semiconductor light emitting device comprising:
a n-type nitride layer and a p-type nitride layer; an active layer disposed between the n-type and the p-type nitride layer and with a multiple quantum well structure wherein a plurality of quantum well layers and a plurality of quantum barrier layer are stacked alternatively in the active layer; and a superlattice layer between the active layer and the p-type nitride layer with asymmetric structure with respect to a center thereof.