INERT-DOMINANT PULSING IN PLASMA PROCESSING SYSTEMS

摘要

A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.

主权项

1. A method for etching using atomic layer etching in a plasma processing chamber of a plasma processing system, said plasma processing chamber having at least one plasma generating source and at least a gas source for providing a process gas into an interior region of said plasma processing chamber, comprising providing a plurality of cycles, wherein each cycle comprises:
flowing a first gas comprising a reactant gas and an inert gas into said processing chamber; providing a first RF signal to form the first gas into a plasma; stopping the flow of the first gas into the processing chamber; flowing a second gas into the processing chamber, wherein the second gas consists essentially of the inert gas; providing a second RF different from the first RF signal to form the second gas into a plasma; and stopping the flow of the second gas into said processing chamber.