发明名称 |
SEMICONDUCTOR PROCESSING SYSTEM WITH SOURCE FOR DECOUPLED ION AND RADICAL CONTROL |
摘要 |
<p>A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.</p> |
申请公布号 |
SG11201402690T(A) |
申请公布日期 |
2014.10.30 |
申请号 |
SGT11201402690 |
申请日期 |
2012.12.04 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
KOSHIISHI, AKIRA;VENTZEK, PETER, L.G.;SHINAGAWA, JUN;HOLLAND, JOHN, PATRICK |
分类号 |
H01B13/00 |
主分类号 |
H01B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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