| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an AlN layer or an AlGaN layer which has a refined and flat surface by a lateral growth method on a surface of a sapphire (0001) substrate such as a groove structure, on which irregularity processing is performed.SOLUTION: A manufacturing method of an epitaxial growth template comprises: performing irregularity processing on a surface of a sapphire (0001) substrate so as to make crowns of salients form a flat and predetermined planar view pattern; performing C-axis orientation control on a substrate surface subjected to the irregularity processing so as to grow a C+ axis-oriented AlN layer on flat faces of the salient crowns except edge parts to grow an initial AlN layer having a film thickness so as not to fully fill recesses formed by the irregularity processing and so as not to block openings of the recesses; epitaxially growing an AlGaN(0001) (1≥x>0, x+y=1) layer on the initial AlN layer by using a lateral growth method to cover upper parts of the recesses with the laterally grown AlGaN (0001) (1≥x>0, x+y=1) layer from above the salient crowns thereby to manufacture an epitaxial growth template which has a refined and flat surface and achieves a low threading dislocation density. |
