| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a cubic crystal silicon carbide semiconductor substrate, in which an epitaxial film of a high quality having little crystal defect is formed.SOLUTION: A cubic crystal silicon carbide semiconductor substrate comprises: a silicon substrate 11; and a cubic crystal silicon carbide epitaxial film 12 formed by an epitaxial growth of cubic crystal silicon carbide on the silicon substrate 11. The cubic crystal silicon carbide epitaxial film 12 is formed on a first face 11a or a crystal face expressed by a Mirror index (100) on the silicon substrate 11. With respect to a first axis L1 expressed by a mirror index [100] in the silicon substrate 11, a second axis L2, which is expressed by the mirror index [100] in the cubic crystal silicon carbide epitaxial film 12, is inclined by a predetermined angleΘin a first direction expressed by a mirror index [011] in the silicon substrate 11.</p> |
