FIELD EFFECT TRANSISTOR AND HIGH FREQUENCY AMPLIFICATION CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor that easily suppresses harmonics while maintaining a band, and a high frequency amplification circuit that can be downsized.SOLUTION: The field effect transistor has a laminate, a multi-finger electrode, a gate bus electrode, a gate terminal electrode, a source terminal electrode and a drain terminal electrode. The multi-finger electrode has two gate finger electrodes, a drain finger electrode and a source finger electrode. The gate finger electrodes, the drain finger electrode and the source finger electrode are parallel with a central axis of a cell. The gate bus electrode connects the two multiple gate finger electrodes bundled in common. The drain terminal electrode connects respective drain finger electrodes of two adjacent cells bundled in common and is disposed along a first straight line. Central axes of the two adjacent cells intersect at 90 degrees. Two adjacent multi-finger electrodes are arranged symmetrically.