| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce wiring resistance between a first gate electrode and a second gate electrode.SOLUTION: A semiconductor device 1 comprises: a buried insulation film 12 which is arranged between first and second active regions 1A, 1B of a principal surface of a semiconductor substrate 2 and separates a gate electrode 11 corresponding to the first active region 1A and a gate electrode 11 corresponding to the second active region 1B, and which is formed to have a film thickness in which upper limits of the gate electrodes project from an upper surface of the buried insulation film 12; and a metal film 41 which is formed on the upper surface of the buried insulation film 12 and contacts the upper limit of the gate electrode 11 corresponding to the first active region at one end of a lower surface and contacts the upper limit of the gate electrode 11 corresponding to the second active region 1B at the other end of the lower surface.</p> |
