METHOD OF LASER ANNEALING PROCESS

摘要

The present disclosure discloses a method of laser annealing process, wherein the surface of the semiconductor structure on a substrate is scanned by a laser annealing device, and the said laser annealing device comprises a laser source and the optical instruments. The invention comprises the following steps: generating a laser beam by the laser source, and the laser beam is irradiating on a mirror, the route thereof changed by 90 degrees and converging the laser beam by the optical instrument thereafter. By this method, an improved annealing process which saved the chamber, reduced the likelihood of the oxidation of silicon film in the annealing process, improved the electrical property of silicon substrate, reduced the weight of machine and further simplified the maintenance machine.

主权项

1. A method of laser annealing process, comprising:
(a) generating a Laser Beam (0) by a Laser Source (2); (b) reflecting and converging the laser beam; (c) scanning Amorphous Silicon (11) on the surface of a Substrate (1) at a predetermined speed by Laser Beam (0); wherein, the Laser Beam (0) is generated in pulse train; the pulse train includes M groups of pulse train, where the each train includes N pulse; M and N are the natural numbers bigger than 1.