发明名称 Integrated-Circuit Module with Waveguide Transition Element
摘要 An integrated-circuit module includes a package molding compound layer, a radio-frequency (RF) integrated circuit embedded within the package molding compound layer and having an RF port, a waveguide transition structure embedded within the package molding compound layer, and a redistribution layer. The waveguide transition structure includes a transmission line interface section, a waveguide interface section configured for coupling to a rectangular waveguide housing, and a transformer section configured to provide a mode transition between the transmission line interface section and the waveguide interface section. The redistribution layer includes at least one insulating layer and at least one metallization layer, extending between the RF integrated circuit and the waveguide transition structure across a surface of the package molding compound layer. The first redistribution layer includes an RF transmission line conductively connected between the RF port of the RF integrated circuit and the transmission line interface section of the waveguide transition structure.
申请公布号 US2014320231(A1) 申请公布日期 2014.10.30
申请号 US201313872718 申请日期 2013.04.29
申请人 Infineon Technologies AG 发明人 Seler Ernst;Wojnowski Maciej;Hartner Walter
分类号 H01P5/107;H01L21/56 主分类号 H01P5/107
代理机构 代理人
主权项 1. A integrated-circuit module, comprising: a package molding compound layer comprising a package molding compound and having opposing first and second surfaces; a radio-frequency (RF) integrated circuit embedded in the package molding compound and including an RF port; a waveguide transition structure embedded in the package molding compound and including a transmission line interface section, a waveguide interface section configured for coupling to a rectangular waveguide housing, and a transformer section configured to provide a propagation mode transition between the transmission line interface section and the waveguide interface section; and a first redistribution layer comprising at least one insulating layer and at least one metallization layer and extending between the RF integrated circuit and the waveguide transition structure across the first surface of the package molding compound layer, the first redistribution layer further comprising an RF transmission line that is conductively connected between the RF port of the RF integrated circuit and the transmission line interface section of the waveguide transition structure.
地址 US