OPTOELECTRONIC GAN-BASED COMPONENT HAVING INCREASED ESD RESISTENCE VIA A SUPERLATTICE AND METHOD FOR THE PRODUCTION THEREOF

摘要

An optoelectronic component (10) comprises a semiconductor layer structure (100) that has a quantum film structure as an active layer (140) and a p-doped layer (160) that is provided on top of said quantum film structure (140). The p-doped layer (160) comprises at least a first partial layer (161) and a second partial layer (162). The second partial layer (162) has a higher degree of doping (323) than the first partial layer (161).