Sequential Atomic Layer Deposition of Electrodes and Resistive Switching Components

摘要

Provided are methods of forming nonvolatile memory elements using atomic layer deposition techniques, in which at least two different layers of a memory element are deposited sequentially and without breaking vacuum in a deposition chamber. This approach may be used to prevent oxidation of various materials used for electrodes without a need for separate oxygen barrier layers. A combination of signal lines and resistive switching layers may be used to cap the electrodes and to minimize their oxidation. As such, fewer layers are needed in a memory element. Furthermore, atomic layer deposition allows more precise control of electrode thicknesses. In some embodiments, a thickness of an electrode may be less than 50 Angstroms. Overall, atomic layer deposition of electrodes and resistive switching layers lead to smaller thicknesses of entire memory elements making them more suitable for low aspect ratio features of advanced nodes.

主权项

1. A method for forming a nonvolatile memory element, the method comprising:
forming a first layer using atomic layer deposition,
the first layer being operable as a first electrode,the first layer comprising an oxygen sensitive material; and forming a second layer using atomic layer deposition,
the second layer being operable as a resistive switching layer,wherein the second layer is formed directly over the first layer without breaking vacuum in a processing chamber between forming the first layer and forming the second layer, andwherein the first layer and the second layer form a continuous interface.