发明名称 PLASMA PROCESSING DEVICE AND HIGH-FREQUENCY GENERATOR
摘要 <p>Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.</p>
申请公布号 KR20140125807(A) 申请公布日期 2014.10.29
申请号 KR20147023376 申请日期 2013.01.15
申请人 TOKYO ELECTRON LIMITED 发明人 KANEKO KAZUSHI;FUNAZAKI KAZUNORI;KATO HIDEO
分类号 H05H1/46;H01L21/205;H01L21/3065;H01L21/31;H01Q13/22 主分类号 H05H1/46
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