发明名称 真空処理装置
摘要 <p>[Object] To provide a vacuum processing apparatus capable of suppressing the diffusion of an electron beam even in a high vacuum region, preventing an evaporation rate from being reduced, and performing stable film formation. [Solving Means] A vacuum processing apparatus (vapor deposition apparatus) (1) includes a vacuum vapor deposition chamber (50), an electron gun (20), and an electron beam focusing mechanism (150). The vacuum vapor deposition chamber (50) is provided with an evaporation source that houses an evaporation material (31), and a member to be processed (10) obtained by heating the evaporation material (31) to be vapor-deposited as a vapor-deposited film. The electron gun is arranged adjacently to the vacuum vapor deposition chamber (50) and emits an electron beam to heat the evaporation material (31). The electron beam focusing mechanism (150) is provided within the vacuum vapor deposition chamber (50) and focuses the electron beam emitted from the electron gun 20.</p>
申请公布号 JP5616426(B2) 申请公布日期 2014.10.29
申请号 JP20120500506 申请日期 2011.02.16
申请人 发明人
分类号 C23C14/30;H01J37/065;H01J37/305 主分类号 C23C14/30
代理机构 代理人
主权项
地址
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